ASML and TSMC Are Moving High-NA EUV From 6-Inch to 12-Inch Photomasks
ASML·medium signal
ASML and TSMC announced an industry transition to large-format 12-inch photomasks for High NA EUV lithography, with other mask suppliers and ecosystem partners signaling interest. The timeline runs long: a 12-inch mask pilot production line targeted for 2031 and full lithography system readiness in 2033, against TSMC starting High NA high-volume manufacturing in 2030. Larger masks remove field-stitching constraints and raise scanner productivity, which is the practical bottleneck on how cheaply advanced AI silicon can be printed.