China's CXMT Starts Mass Production of 11.95nm G5 DRAM Without EUV
Seoul Economic Daily·high signal
CXMT announced at the 2026 World Manufacturing Conference on September 20 that its fifth-generation DRAM platform entered mass production with an 11.95nm memory-array half-pitch, a 45:1 capacitor aspect ratio, and wafer output up more than 50% over the prior node, with 24GB LPDDR5X already shipping for flagship phones. The node was reached via quadruple patterning rather than ASML EUV, which remains export-denied. Eastern Herald puts CXMT's resulting global DRAM share at 10%, the first time Samsung, SK Hynix and Micron would hold under 90% in over a decade; treat that share figure as single-sourced.